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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTA114EETL

DTA114EETL

DTA114EETL

Rohm Semiconductor

TRANS PREBIAS PNP 150MW EMT3
10000

Specifications

Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500μA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
EMT3
TRANS PREBIAS PNP 200MW SMT3
0
PNP -100MA -50V DIGITAL TRANSIST
0
TRANS PREBIAS PNP 150MW EMT3
0
DTA113ZU3HZG IS AN DIGITAL TRANS
0
TRANS PREBIAS PNP 200MW SMT3
0
PNP DIGITAL TRANSISTOR (AEC-Q101
0
PNP Bipolar Digital Transistor (BRT)
0
TRANS PREBIAS PNP 200MW SMT3
0
PNP -100MA -50V DIGITAL TRANSIST
0
PNP -100MA -50V DIGITAL TRANSIST
0
 

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