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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTA113TKAT146

DTA113TKAT146

DTA113TKAT146

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3
10000

Specifications

Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250μA, 5mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Frequency - Transition:
250 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SMT3
PNP -100MA -50V DIGITAL TRANSIST
0
PNP DIGITAL TRANSISTOR (AEC-Q101
0
TRANS PREBIAS PNP 150MW EMT3
0
DTA113ZU3HZG IS AN DIGITAL TRANS
0
TRANS PREBIAS PNP 200MW SMT3
0
DTA113ZU3 IS AN DIGITAL TRANSIST
0
PNP Bipolar Digital Transistor (BRT)
0
TRANS PREBIAS PNP 200MW SMT3
0
TRANS PREBIAS PNP 150MW EMT3
0
PNP -100MA -50V DIGITAL TRANSIST
0
 

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