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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTA114EET1G

DTA114EET1G

DTA114EET1G

ON Semiconductor

PNP Bipolar Digital Transistor (BRT)
10000

Specifications

Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300μA, 10mA
Current - Collector Cutoff (Max):
500nA
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
SC-75, SOT-416
TRANS PREBIAS PNP 200MW SMT3
0
PNP -100MA -50V DIGITAL TRANSIST
0
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0
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TRANS PREBIAS PNP 200MW SMT3
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TRANS PREBIAS PNP 150MW EMT3
0
PNP -100MA -50V DIGITAL TRANSIST
0
PNP -100MA -50V DIGITAL TRANSIST
0
 

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