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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > 2SC5085-Y(TE85L,F)

2SC5085-Y(TE85L,F)

2SC5085-Y(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ USM
10000

Specifications

Voltage - Collector Emitter Breakdown (Max):
12V
Frequency - Transition:
7GHz
Noise Figure (dB Typ @ f):
1.1dB @ 1GHz
Gain:
11dB ~ 16.5dB
Power - Max:
100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 20mA, 10V
Current - Collector (Ic) (Max):
80mA
Operating Temperature:
125°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SC-70, SOT-323
Supplier Device Package:
SC-70
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