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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC5658M3T5G

2SC5658M3T5G

2SC5658M3T5G

ON Semiconductor

NPN Bipolar Transistor
10000

Specifications

Package / Case:
SOT-723
Supplier Device Package:
SOT-723
Mounting Type:
Surface Mount
Operating Temperature:
150°C (TJ)
Frequency - Transition:
180MHz
Power - Max:
260 mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 6V
Current - Collector Cutoff (Max):
500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 60mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Current - Collector (Ic) (Max):
100 mA
Transistor Type:
NPN
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0
RF TRANS NPN 12V 7GHZ USM
0
TRANS NPN 50V 1A SOT-89
0
RF TRANS NPN 12V 7GHZ SSM
0
RF TRANS NPN 12V 7GHZ USM
0
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0
TRANS NPN 60V 5A SOT-428
0
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0
RF TRANS NPN 12V 1.7GHZ 3SSFP
0
 

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