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Home > Product Center > DMG3N60SJ3

DMG3N60SJ3

DMG3N60SJ3

Diodes Incorporated

MOSFET BVDSS: 501V 650V TO251
10000

Specifications

Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs:
12.6 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
354 pF @ 25 V
Power Dissipation (Max):
41W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-251
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
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