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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > DMG3415U-7

DMG3415U-7

DMG3415U-7

Diodes Inc.

MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity:P Channel; Current Id Max:-4A; Drain Source Voltage Vds:-20V; On State Resistance:31mohm; Rds(on) Test
10000

Specifications

Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs:
9.1 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
294 pF @ 10 V
Power Dissipation (Max):
900mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Package / Case:
TO-236-3, SC-59, SOT-23-3
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