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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI1025X-T1-GE3

SI1025X-T1-GE3

SI1025X-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 60V 0.19A SC-89
10000

Specifications

FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
190mA
Rds On (Max) @ Id, Vgs:
4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs:
1.7nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:
23pF @ 25V
Power - Max:
250mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
SC-89 (SOT-563F)
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