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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC114ECAT116

DTC114ECAT116

DTC114ECAT116

Rohm Semiconductor

TRANS PREBIAS NPN 200MW SST3
10000

Specifications

Current - Collector (Ic) (Max):
50 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500μA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SST3
DTC MPU, CURRENT OUTPUT
0
DTC MPU, LINEAR VOLTAGE OUTPUT
0
NPN 100MA 50V DIGITAL TRANSISTOR
0
NPN 100MA 50V DIGITAL TRANSISTOR
0
DTC MPU, VOLTAGE OUTPUT
0
DTC MPU, RELAY OUTPUT WITH CT CO
0
TRANS PREBIAS NPN 200MW SC75
0
TRANS PREBIAS NPN 200MW SMT3
0
TRANS PREBIAS NPN 200MW UMT3
0
NPN 100MA 50V DIGITAL TRANSISTOR
0
 

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