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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > SBSP52T1G

SBSP52T1G

SBSP52T1G

ON Semiconductor

TRANS NPN DARL 80V 1A SOT223
10000

Specifications

Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
1.3V @ 500μA, 500mA
Current - Collector Cutoff (Max):
10μA
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 500mA, 10V
Power - Max:
800 mW
Operating Temperature:
-65°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
TO-261-4, TO-261AA
Supplier Device Package:
SOT-223 (TO-261)
SURFACE MOUNT PI FILTER
0
FILTER LC(PI) 0.15UF SMD
0
SURFACE MOUNT PI FILTER
0
SURFACE MOUNT PI FILTER
0
FILTER LC(PI) 0.068UF SMD
0
FILTER LC(PI) 0.047UF SMD
0
FILTER LC(PI) 0.01UF SMD
0
FILTER LC(PI) 1000PF SMD
0
FILTER LC(PI) 100PF SMD
0
SURFACE MOUNT PI FILTER
0
 

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