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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC3647T-TD-E

2SC3647T-TD-E

2SC3647T-TD-E

ON Semiconductor

Bip Transistor 100V 2A VCE(sat);400mV max. NPN Single PCP
10000

Specifications

Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 100mA, 1A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Power - Max:
500 mW
Frequency - Transition:
120MHz
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
TO-243AA
Supplier Device Package:
PCP
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