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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > PMDXB550UNEZ

PMDXB550UNEZ

PMDXB550UNEZ

Nexperia USA Inc.

MOSFET 2N-CH 30V 0.59A 6DFN
10000

Specifications

Packaging:
Tape & Reel (TR)
Part Status:
Active
FET Type:
2 N-Channel (Dual)
FET Feature:
Standard
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
590mA
Rds On (Max) @ Id, Vgs:
670mOhm @ 590mA, 4.5V
Vgs(th) (Max) @ Id:
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.05nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
30.3pF @ 15V
Power - Max:
285mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-XFDFN Exposed Pad
Supplier Device Package:
DFN1010B-6
MOSFET 2P-CH 30V 0.41A 6DFN
0
20 V, DUAL N-CHANNEL TRENCH MOSF
0
MOSFET 2N-CH 20V 0.6A 6DFN
0
 

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