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Home > Product Center > DMG6601LVT-7

DMG6601LVT-7

DMG6601LVT-7

Diodes Incorporated

MOSFET N/P-CH 30V 26TSOT
10000

Specifications

FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
3.8A, 2.5A
Rds On (Max) @ Id, Vgs:
55mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:
1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs:
12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
422pF @ 15V
Power - Max:
850mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:
TSOT-23
MOSFET N-CH 30V 6A TSOT26
0
MOSFET N/P-CH 30V TSOT23-6
0
MOSFET 2N-CH 20V 5.2A 8TSSOP
0
MOSFET N-CH 20V 6.5A SOT-23
0
MOSFET N/P-CH 30V TSOT26
0
Mosfet Array 2 N-Channel (Dual) 20V 9.5A 1.28W Surface Mount 8-SO
0
 

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