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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2N7002ET1G

2N7002ET1G

2N7002ET1G

ON Semiconductor

N-Channel 60 V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
30000

Specifications

Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs:
0.81 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
26.7 pF @ 25 V
Power Dissipation (Max):
300mW (Tj)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Package / Case:
TO-236-3, SC-59, SOT-23-3
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V 0.2A TO-92
0
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product ha
0
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V TO92
0
MOSFET N-CH 60V 0.2A TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
 

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