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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > BFU730F,115

BFU730F,115

BFU730F,115

NXP Semiconductors

RF TRANS NPN 2.8V 55GHZ 4DFP
10000

Specifications

Voltage - Collector Emitter Breakdown (Max):
2.8V
Frequency - Transition:
55GHz
Noise Figure (dB Typ @ f):
0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
Power - Max:
197mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
205 @ 2mA, 2V
Current - Collector (Ic) (Max):
30mA
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-343F
Supplier Device Package:
4-DFP
RF TRANS NPN 2.8V 43GHZ 4DFP
0
RF TRANS NPN 2.8V 55GHZ 4SO
0
RF TRANS NPN 2.8V 45GHZ 4DFP
0
 

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