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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2N7002

2N7002

2N7002

ON Semiconductor

Surface Mount-N-Channel-60V-115mA(Tj)-SOT-23(TO-236AB) MOSFET N-CH 60V 115MA SOT-23
10000

Specifications

Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs:
2 nC @ 5 V
Vgs (Max):
±18V
Input Capacitance (Ciss) (Max) @ Vds:
43 pF @ 25 V
Power Dissipation (Max):
350mW (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Package / Case:
TO-236-3, SC-59, SOT-23-3
MOSFET N-CH 60V 200MA TO-92
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MOSFET N-CH 60V 0.2A TO-92
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This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product ha
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MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V TO92
0
MOSFET N-CH 60V 0.2A TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
 

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