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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2N7002K-T1-GE3

2N7002K-T1-GE3

2N7002K-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 300MA SOT23-3
10000

Specifications

Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
30 pF @ 25 V
Power Dissipation (Max):
350mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Package / Case:
TO-236-3, SC-59, SOT-23-3
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V 0.2A TO-92
0
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product ha
0
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V TO92
0
MOSFET N-CH 60V 0.2A TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
MOSFET N-CH 60V 200MA TO-92
0
 

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