MY GROUP 2023 FIEE has been successfully concluded, thanks for your support!
Basket 0
arrow
MY GROUP- Electronic Components Shop
There is no merchandise in the shopping cart, and you will see the merchandise you added before logging in.
Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF840PBF

IRF840PBF

IRF840PBF

VISHAY

N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
1000

Specifications

Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 25 V
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
MOSFET N-CH 500V 2.5A TO-220AB
0
MOSFET N-CH 500V 5A TO-220AB
0
MOSFET N-CH 500V 5A TO-220AB
0
MOSFET N-CH 500V 5A TO262-3
0
MOSFET N-CH 500V 5A D2PAK
0
MOSFET N-CH 500V 5A TO262-3
0
MOSFET, N, 500V, 4.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1
0
MOSFET N-CH 500V 8A TO-262
0
MOSFET N-CH 500V 8A TO-220AB
0
MOSFET N-CH 500V 8A TO-220AB
0
 

Basket

User Center

Skype

admin@mygroup-asia.com

Online Service

https://mkt.xiaoman.cn/page/target/tracking-code-guide.html