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Home > Product Center > Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MMBT5551LT1G

MMBT5551LT1G

MMBT5551LT1G

ON Semiconductor

Bipolar (BJT) Transistor -NPN-160V-600mA-225mW-Surface Mount-SOT-23-3(TO-236) TRANS NPN 160V 0.6A SOT23
10000

Specifications

Transistor Type:
NPN
Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
160 V
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Power - Max:
225 mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SOT-23-3 (TO-236)
TRANSISTOR NPN GP SOT-23
0
TRANS NPN 18V 1A SOT23-3
0
TRANS PNP 45V 0.5A SOT-23
0
TRANS NPN 40V 1A SOT-23
0
TRANSISTOR, NPN, 40V, 0.6A, 50A/
0
TRANS NPN 18V 1A SOT23-3
0
TRANS NPN 40V 0.6A SOT-723
0
TRANS NPN 40V 0.6A SOT23
0
TRANS NPN 40V 0.6A SOT-23
0
TRANS NPN 40V 0.6A SMD SOT23-3
0
 

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